N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304DDS-T1-GE3

RS Stock No.:: 812-3117P
Mfr. Part No.:: SI2304DDS-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304DDS-T1-GE3

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Subtotal (15 reels of 50 units)**. Quantities below 150 on continuous strip

HK$1,395.00

3350 In stock for delivery within 3 working days*

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Units	Per unit
750 - 1450	HK$1.814
1500 +	HK$1.786

**price indicative

RS Stock No.:: 812-3117P
Mfr. Part No.:: SI2304DDS-T1-GE3
Manufacturer:: Vishay

Si2304DDS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	1.4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	4.5 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	3.04mm
Height	1.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 Vishay SI2304DDS-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor