onsemi PowerTrench Type N-Channel MOSFET, 11.4 A, 150 V Enhancement, 3-Pin TO-252 FDD770N15A
- RS Stock No.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$55.40
Add 50 units to get free delivery
Last RS stock
- Plus 100 unit(s) shipping from 23 February 2026
- Final 1,660 unit(s) shipping from 02 March 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | HK$5.54 | HK$55.40 |
| 630 - 1240 | HK$5.40 | HK$54.00 |
| 1250 + | HK$5.31 | HK$53.10 |
*price indicative
- RS Stock No.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 77mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.25V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 77mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.25V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 FDD390N15A
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 FDD2582
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 FDD86250