IXYS Type N-Channel MOSFET, 90 A, 600 V Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 804-7596
- Distrelec Article No.:
- 302-53-359
- Mfr. Part No.:
- IXFN110N60P3
- Manufacturer:
- IXYS
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
HK$330.40
FREE delivery for orders over HK$250.00
In Stock
- 79 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | HK$330.40 |
| 3 - 4 | HK$320.50 |
| 5 + | HK$310.90 |
*price indicative
- RS Stock No.:
- 804-7596
- Distrelec Article No.:
- 302-53-359
- Mfr. Part No.:
- IXFN110N60P3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 245nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.23mm | |
| Width | 25.07 mm | |
| Standards/Approvals | No | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 245nC | ||
Maximum Operating Temperature 150°C | ||
Length 38.23mm | ||
Width 25.07 mm | ||
Standards/Approvals No | ||
Height 9.6mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227 IXFN110N60P3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227 IXFN82N60P
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227 IXFN48N60P
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227 IXFN80N60P3
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227