N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
- RS Stock No.:
- 804-7593
- Mfr. Part No.:
- IXFN210N30P3
- Manufacturer:
- IXYS
1 In stock for delivery within 3 working days
Added
Price Each
HK$361.25
| Units | Per unit |
| 1 - 2 | HK$361.25 |
| 3 - 14 | HK$352.21 |
| 15 + | HK$345.17 |
- RS Stock No.:
- 804-7593
- Mfr. Part No.:
- IXFN210N30P3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 192 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | SOT-227B |
| Series | HiperFET, Polar3 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 14.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.5 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 268 nC @ 10 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |