N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS Stock No.:: 802-4357P
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

71 In stock for delivery within 3 working days

估計總價 (7 Units)

HK$1,596.21

Units	Per unit
7 - 12	HK$228.03
13 +	HK$224.52

RS Stock No.:: 802-4357P
Mfr. Part No.:: IXFB210N30P3
Manufacturer:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	20.29mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	5.31mm
Height	26.59mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series