IXYS HiperFET, Q3-Class N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXFR15N100Q3
- RS Stock No.:
- 801-1430
- Distrelec Article No.:
- 302-53-393
- Mfr. Part No.:
- IXFR15N100Q3
- Manufacturer:
- IXYS
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Bulk discount available
Subtotal (1 unit)*
HK$174.80
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In Stock
- 54 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 7 | HK$174.80 |
| 8 - 14 | HK$170.40 |
| 15 + | HK$167.80 |
*price indicative
- RS Stock No.:
- 801-1430
- Distrelec Article No.:
- 302-53-393
- Mfr. Part No.:
- IXFR15N100Q3
- Manufacturer:
- IXYS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | ISOPLUS247 | |
| Series | HiperFET, Q3-Class | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.2 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 400 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 16.13mm | |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V | |
| Width | 5.21mm | |
| Height | 21.34mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type ISOPLUS247 | ||
Series HiperFET, Q3-Class | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.2 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 400 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 16.13mm | ||
Typical Gate Charge @ Vgs 64 nC @ 10 V | ||
Width 5.21mm | ||
Height 21.34mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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