Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SQ4920EY-T1_GE3

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Subtotal (1 tape of 5 units)*

HK$90.40

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Units
Per unit
Per Tape*
5 - 620HK$18.08HK$90.40
625 - 1245HK$17.60HK$88.00
1250 +HK$17.36HK$86.80

*price indicative

Packaging Options:
RS Stock No.:
787-9462
Mfr. Part No.:
SQ4920EY-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.75V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Power Dissipation Pd

4.4W

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Length

5mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Vishay Semiconductor


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