Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

RS Stock No.:: 787-9052P
Mfr. Part No.:: SI4925DDY-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

7365 In stock for delivery within 3 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$7.176

Units	Per unit
5 +	HK$7.176

RS Stock No.:: 787-9052P
Mfr. Part No.:: SI4925DDY-T1-GE3
Manufacturer:: Vishay

Si4925DDY, Dual P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	41 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Typical Gate Charge @ Vgs	32 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor