Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3
- RS Stock No.:
- 787-9052
- Mfr. Part No.:
- SI4925DDY-T1-GE3
- Manufacturer:
- Vishay
30 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$7.176
| Units | Per unit | Per Pack* |
| 5 + | HK$7.176 | HK$35.88 |
| *price indicative | ||
- RS Stock No.:
- 787-9052
- Mfr. Part No.:
- SI4925DDY-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Dual P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 41 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 5 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Transistor Material | Si |
| Width | 4mm |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |