Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS Stock No.:: 787-9020P
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

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Bulk discount available

Subtotal (32 reels of 20 units)**. Quantities below 150 on continuous strip

HK$2,818.56

2240 In stock for delivery within 3 working days*

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FREE delivery for orders over HK$850.00

Units	Per unit
640 - 1240	HK$4.294
1260 +	HK$4.228

**price indicative

RS Stock No.:: 787-9020P
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Number of Elements per Chip	2
Width	4mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

FREE delivery for orders over HK$850.00

Dual N/P-Channel MOSFET, Vishay Semiconductor