Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tape of 20 units)*

HK$29.40

Add to Basket
Select or type quantity
Orders below HK$250.00 (exc. GST) cost HK$50.00.
Temporarily out of stock
  • Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tape*
20 - 740HK$1.47HK$29.40
760 - 1480HK$1.435HK$28.70
1500 +HK$1.41HK$28.20

*price indicative

Packaging Options:
RS Stock No.:
787-9005
Mfr. Part No.:
SI1012CR-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

630mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-75

Series

Si1012CR

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.1Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.3nC

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Length

1.68mm

Standards/Approvals

No

Width

0.86 mm

Height

0.8mm

Automotive Standard

No

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links