Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS Stock No.:: 780-0655P
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

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Subtotal (75 reels of 10 units)**. Quantities below 150 on continuous strip

HK$3,819.00

On back order for despatch 21/05/2025, delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
750 - 1490	HK$4.965
1500 +	HK$4.887

**price indicative

RS Stock No.:: 780-0655P
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Maximum Operating Temperature	+150 °C
Width	2mm
Transistor Material	Si
Number of Elements per Chip	2
Length	2mm
Height	0.75mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

FREE delivery for orders over HK$850.00

Dual N/P-Channel MOSFET, ON Semiconductor