- RS Stock No.:
- 780-0655
- Mfr. Part No.:
- NTLJD3119CTBG
- Manufacturer:
- onsemi
On back order for despatch 01/10/2024, delivery within 3 working days
Added
Price Each (In a Pack of 10)
HK$5.092
Units | Per unit | Per Pack* |
10 - 740 | HK$5.092 | HK$50.92 |
750 - 1490 | HK$4.965 | HK$49.65 |
1500 + | HK$4.887 | HK$48.87 |
*price indicative |
- RS Stock No.:
- 780-0655
- Mfr. Part No.:
- NTLJD3119CTBG
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 4.1 A, 4.6 A |
Maximum Drain Source Voltage | 20 V |
Package Type | WDFN |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 120 mΩ, 200 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2.3 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 2 |
Maximum Operating Temperature | +150 °C |
Length | 2mm |
Typical Gate Charge @ Vgs | 3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V |
Transistor Material | Si |
Width | 2mm |
Height | 0.75mm |
Minimum Operating Temperature | -55 °C |