N-Channel MOSFET, 36 A, 200 V, 8-Pin TDSON Infineon BSC320N20NS3GATMA1
- RS Stock No.:
- 754-5311
- Mfr. Part No.:
- BSC320N20NS3GATMA1
- Manufacturer:
- Infineon
3658 In stock for delivery within 3 working days
Added
Price Each
HK$24.78
| Units | Per unit |
| 1 - 1249 | HK$24.78 |
| 1250 - 2499 | HK$24.35 |
| 2500 + | HK$23.91 |
- RS Stock No.:
- 754-5311
- Mfr. Part No.:
- BSC320N20NS3GATMA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 36 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TDSON |
| Series | OptiMOS 3 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 5.35mm |
| Maximum Operating Temperature | +150 °C |
| Width | 6.1mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |