N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

RS Stock No.:: 752-8381P
Mfr. Part No.:: IPP110N20N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

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Bulk discount available

Subtotal (13 tubes of 1 unit)**

HK$700.70

167 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit
13 - 24	HK$52.60
25 +	HK$51.70

**price indicative

RS Stock No.:: 752-8381P
Mfr. Part No.:: IPP110N20N3GXKSA1
Manufacturer:: Infineon

IPB107N20N3 G, IPP110N20N3 G, IPI110N20N3 G, OptiMOS3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™ 3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.36mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	65 nC @ 10 V
Width	4.57mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.45mm

N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1

FREE delivery for orders over HK$850.00

Infineon OptiMOS™3 Power MOSFETs, 100V and over