Vishay SiR462DP Type N-Channel MOSFET, 19 A, 30 V Enhancement, 8-Pin SO-8 SIR462DP-T1-GE3
- RS Stock No.:
- 710-3402
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$46.30
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 1,930 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | HK$9.26 | HK$46.30 |
| 750 - 1495 | HK$9.02 | HK$45.10 |
| 1500 + | HK$8.92 | HK$44.60 |
*price indicative
- RS Stock No.:
- 710-3402
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiR462DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Width | 5.89 mm | |
| Height | 1.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiR462DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Width 5.89 mm | ||
Height 1.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR462DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3
- Vishay SIHK Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay Si4116DY Type N-Channel MOSFET 25 V Enhancement, 8-Pin SOIC SI4116DY-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3