Infineon CoolMOS S5 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 354-6414P
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
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HK$429.60
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In Stock
- 272 unit(s) ready to ship from another location
- Plus 240 unit(s) shipping from 09 July 2026
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Units | Per unit |
|---|---|
| 8 - 14 | HK$53.70 |
| 15 + | HK$52.80 |
*price indicative
- RS Stock No.:
- 354-6414P
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS S5 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS S5 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Automotive Standard No | ||
Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1
This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.
Features & Benefits
• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control
Applications
• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems
What are the thermal resistance characteristics for this component?
The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.
Is it suitable for use in harsh environments?
Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.
What is the maximum gate-to-source voltage that can be applied?
The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.
Can it handle repetitive avalanche currents?
Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.
How does it perform under pulsed drain conditions?
It can endure pulsed drain current limited to 40A, assuring reliability during short bursts of high current.