onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Subtotal (1 unit)*
HK$3.90
FREE delivery for orders over HK$250.00
Last RS stock
- Plus 23 unit(s) shipping from 23 February 2026
- Final 2,837 unit(s) shipping from 02 March 2026
Units | Per unit |
|---|---|
| 1 + | HK$3.90 |
*price indicative
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 900mW | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 900mW | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.7 mm | ||
Length 3mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 FDV303N
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi Isolated 2 Type N-Channel MOSFET 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- onsemi Isolated 2 Type N-Channel Power MOSFET 50 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 50 V Enhancement, 6-Pin SOT-23 NDC7002N