Vishay SISS Type N-Channel MOSFET, 128 A, 40 V Enhancement, 8-Pin 1212-8S SISS4402DN-T1-GE3

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HK$62.50

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Per unit
Per Pack*
4 - 56HK$15.625HK$62.50
60 - 96HK$14.65HK$58.60
100 - 236HK$13.025HK$52.10
240 - 996HK$12.75HK$51.00
1000 +HK$12.525HK$50.10

*price indicative

Packaging Options:
RS Stock No.:
279-9986
Mfr. Part No.:
SISS4402DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

40V

Package Type

1212-8S

Series

SISS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0022Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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