Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

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Per Pack*
2 - 48HK$27.70HK$55.40
50 - 98HK$25.50HK$51.00
100 - 248HK$22.60HK$45.20
250 - 998HK$22.20HK$44.40
1000 +HK$21.80HK$43.60

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Packaging Options:
RS Stock No.:
279-9963
Mfr. Part No.:
SIRS4302DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

478A

Maximum Drain Source Voltage Vds

30V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

208W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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