Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

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HK$65.60

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Per Pack*
5 - 45HK$13.12HK$65.60
50 - 95HK$11.34HK$56.70
100 - 245HK$10.08HK$50.40
250 - 995HK$9.88HK$49.40
1000 +HK$9.70HK$48.50

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Packaging Options:
RS Stock No.:
279-9956
Mfr. Part No.:
SIR5808DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66.8A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00735Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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