Infineon HEXFET N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF
- RS Stock No.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
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- RS Stock No.:
- 273-3030
- Mfr. Part No.:
- IRFS7537TRLPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 173A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 142nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 173A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 142nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 173A Maximum Continuous Drain Current - IRFS7537TRLPBF
This MOSFET is a high-current N-channel enhancement device designed for surface-mount power switching in demanding electronic systems. It operates across a broad temperature range suitable for harsh environments and delivers substantial power handling for applications requiring efficient conduction and controlled gate-drive behaviour.
Features and Benefits:
• 230W power dissipation enables sustained high-load operation
• 3.30mΩ Rds(on) minimises conduction losses for efficiency
• 142nC gate charge supports predictable switching performance
• 20V gate voltage tolerance protects against overdrive transients
• 1.2V forward voltage reduces voltage drop in conduction paths
• 3.30mΩ Rds(on) minimises conduction losses for efficiency
• 142nC gate charge supports predictable switching performance
• 20V gate voltage tolerance protects against overdrive transients
• 1.2V forward voltage reduces voltage drop in conduction paths
Applications
• Suitable for DC motor drives in industrial control systems
• Ideal for high-current power supplies and converters
• Used with automotive electronics requiring wide temperature range
• Can be used for switch-mode power stages in inverters
• Useful in thermally managed power distribution modules
• Ideal for high-current power supplies and converters
• Used with automotive electronics requiring wide temperature range
• Can be used for switch-mode power stages in inverters
• Useful in thermally managed power distribution modules
What are the thermal operating limits for reliable use?
The device supports operation from -55°C up to 175°C.
How does the package type affect mounting and heat management?
The TO-263 surface-mount package permits low-profile PCB mounting and efficient heat transfer to copper planes.
What channel characteristics determine switching polarity?
It is an N-channel enhancement-mode transistor, requiring a positive gate drive to conduct.
What Peak continuous current capability can be expected in heavy-duty circuits?
The component is specified for continuous drain currents up to 173A.
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