Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1

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HK$5,643.00

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1000 - 1000HK$5.643HK$5,643.00
2000 +HK$5.36HK$5,360.00

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RS Stock No.:
273-2997
Mfr. Part No.:
IPB057N06NATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

60V

Series

IPB057N06N

Package Type

PG-TO263-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-5°C

Typical Gate Charge Qg @ Vgs

27nC

Maximum Operating Temperature

175°C

Length

40mm

Height

1.5mm

Width

40 mm

Standards/Approvals

JEDEC 1, IEC61249-2-21

Automotive Standard

No

The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

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