ROHM R6004END3 Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 R6004END3TL1

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Subtotal (1 pack of 5 units)*

HK$60.10

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Units
Per unit
Per Pack*
5 - 45HK$12.02HK$60.10
50 - 95HK$10.38HK$51.90
100 - 245HK$8.40HK$42.00
250 - 995HK$8.24HK$41.20
1000 +HK$5.90HK$29.50

*price indicative

Packaging Options:
RS Stock No.:
264-3776
Mfr. Part No.:
R6004END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Series

R6004END3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.98Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

59W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The ROHM low-noise power MOSFET is suitable for switching power supply, it is low on-resistance, low radiation noise and Pb-free plating and RoHS compliant.

Fast switching

Parallel use is easy

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