Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223 IRFL024NTRPBF
- RS Stock No.:
- 262-6764
- Distrelec Article No.:
- 304-41-676
- Mfr. Part No.:
- IRFL024NTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$99.30
FREE delivery for orders over HK$250.00
In Stock
- Plus 1,200 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$3.972 | HK$99.30 |
| 50 - 75 | HK$3.892 | HK$97.30 |
| 100 - 225 | HK$3.572 | HK$89.30 |
| 250 - 975 | HK$3.50 | HK$87.50 |
| 1000 + | HK$3.252 | HK$81.30 |
*price indicative
- RS Stock No.:
- 262-6764
- Distrelec Article No.:
- 304-41-676
- Mfr. Part No.:
- IRFL024NTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low on-resistance
Dynamic dv/dt rating
Fasts switching
Fully avalanche rated
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