Infineon HEXFET Type N-Channel MOSFET, 6.9 A, 100 V Enhancement, 8-Pin SO-8 IRF7473TRPBF
- RS Stock No.:
- 262-6738
- Mfr. Part No.:
- IRF7473TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$106.80
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | HK$10.68 | HK$106.80 |
| 50 - 90 | HK$9.48 | HK$94.80 |
| 100 - 490 | HK$8.54 | HK$85.40 |
| 500 - 1990 | HK$7.75 | HK$77.50 |
| 2000 + | HK$7.60 | HK$76.00 |
*price indicative
- RS Stock No.:
- 262-6738
- Mfr. Part No.:
- IRF7473TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4 mm | ||
Automotive Standard No | ||
The Infineon power MOSFET has benefits such as low gate drive current due to improved gate charge characteristic, improved avalanche ruggedness and dynamic dv/dt and fully characterized avalanche voltage and current.
Ultra low on-resistance
High speed switching
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF
- DiodesZetex DMN6022 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- DiodesZetex DMN6022 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 DMN6022SSS-13
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin TO-263