Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

HK$71.80

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Per unit
Per Pack*
2 - 8HK$35.90HK$71.80
10 - 48HK$30.95HK$61.90
50 - 98HK$24.25HK$48.50
100 - 248HK$19.50HK$39.00
250 +HK$19.15HK$38.30

*price indicative

Packaging Options:
RS Stock No.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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