Infineon iPB Type N-Channel MOSFET, 201 A, 40 V Enhancement, 3-Pin TO-263 IPB011N04NF2SATMA1

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Subtotal (1 pack of 2 units)*

HK$58.70

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  • 800 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8HK$29.35HK$58.70
10 - 48HK$25.35HK$50.70
50 - 98HK$19.85HK$39.70
100 - 248HK$16.00HK$32.00
250 +HK$15.65HK$31.30

*price indicative

Packaging Options:
RS Stock No.:
262-5843
Mfr. Part No.:
IPB011N04NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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