Infineon iPB N-Channel MOSFET, 180 A, 60 V Enhancement TO-263 IPB180N06S4H1ATMA2
- RS Stock No.:
- 260-5120
- Mfr. Part No.:
- IPB180N06S4H1ATMA2
- Manufacturer:
- Infineon
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HK$80.30
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | HK$40.15 | HK$80.30 |
| 50 - 98 | HK$36.05 | HK$72.10 |
| 100 - 248 | HK$29.65 | HK$59.30 |
| 250 - 498 | HK$29.00 | HK$58.00 |
| 500 + | HK$25.30 | HK$50.60 |
*price indicative
- RS Stock No.:
- 260-5120
- Mfr. Part No.:
- IPB180N06S4H1ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Maximum Drain Source Resistance Rds | 1.70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series iPB | ||
Maximum Drain Source Resistance Rds 1.70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 60V Maximum Drain-Source Voltage, 180A Maximum Continuous Drain Current - IPB180N06S4H1ATMA2
This device is an N‑channel enhancement‑mode power transistor designed for high-current switching in demanding environments. It operates across a wide temperature span and is supplied in a TO‑263 package suitable for power assemblies. The component meets automotive qualification and environmental restriction standards for use in vehicle systems and other applications requiring robust thermal and electrical performance.
Features and Benefits:
• 60V drain‑source rating allows robust voltage headroom for switching
• 180A continuous current capability supports heavy-load operation
• 1.7mΩ on‑resistance reduces conduction losses during high currents
• -55°C to175°C junction range enables extreme temperature endurance
• TO‑263 package eases mounting and thermal dissipation for assemblies
• 180A continuous current capability supports heavy-load operation
• 1.7mΩ on‑resistance reduces conduction losses during high currents
• -55°C to175°C junction range enables extreme temperature endurance
• TO‑263 package eases mounting and thermal dissipation for assemblies
Applications
• Suitable for automotive power distribution and motor drives
• Ideal for high-current DC switching in battery systems
• Used with power converters in industrial control equipment
• Can be used for load switching in harsh temperature environments
• Ideal for high-current DC switching in battery systems
• Used with power converters in industrial control equipment
• Can be used for load switching in harsh temperature environments
What certification indicates suitability for automotive use?
It holds AEC‑Q101 qualification appropriate for automotive power devices.
Which lead‑frame package is provided for PCB mounting?
The component is supplied in a TO‑263 surface‑mount package.
What environmental restriction standard does it comply with?
It conforms to RoHS requirements limiting hazardous substances.
What channel polarity and mode does it employ?
It is an N‑channel device operating in enhancement mode.
Related links
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement TO-263 IPB180N10S403ATMA1
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 90 A Enhancement TO-263
- Infineon iPB Type N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB Type N-Channel MOSFET, 90 A Enhancement TO-263 IPB90N06S404ATMA2