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Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

RS Stock No.:: 260-5120
Mfr. Part No.:: IPB180N06S4H1ATMA2
Manufacturer:: Infineon

Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

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Bulk discount available

Subtotal (1 pack of 2 units)*

HK$68.30

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Units	Per unit	Per Pack*
2 - 48	HK$34.15	HK$68.30
50 - 98	HK$30.65	HK$61.30
100 - 248	HK$25.20	HK$50.40
250 - 498	HK$24.70	HK$49.40
500 +	HK$21.50	HK$43.00

*price indicative

RS Stock No.:: 260-5120
Mfr. Part No.:: IPB180N06S4H1ATMA2
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Series	iPB
	Package Type	TO-263
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Series iPB
	Package Type TO-263
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB180N06S4H1ATMA2

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

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