Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF
- RS Stock No.:
- 258-3999
- Distrelec Article No.:
- 304-40-553
- Mfr. Part No.:
- IRLR3915TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
HK$27.60
FREE delivery for orders over HK$250.00
In Stock
- 1,472 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$13.80 | HK$27.60 |
| 10 - 98 | HK$13.15 | HK$26.30 |
| 100 - 248 | HK$12.35 | HK$24.70 |
| 250 - 498 | HK$11.45 | HK$22.90 |
| 500 + | HK$10.55 | HK$21.10 |
*price indicative
- RS Stock No.:
- 258-3999
- Distrelec Article No.:
- 304-40-553
- Mfr. Part No.:
- IRLR3915TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 120W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 120W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
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