Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF
- RS Stock No.:
- 258-3982
- Distrelec Article No.:
- 304-40-536
- Mfr. Part No.:
- IRFR220NTRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$31.20
FREE delivery for orders over HK$250.00
In Stock
- 1,045 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | HK$6.24 | HK$31.20 |
| 10 - 95 | HK$5.94 | HK$29.70 |
| 100 - 245 | HK$5.56 | HK$27.80 |
| 250 - 495 | HK$5.18 | HK$25.90 |
| 500 + | HK$4.76 | HK$23.80 |
*price indicative
- RS Stock No.:
- 258-3982
- Distrelec Article No.:
- 304-40-536
- Mfr. Part No.:
- IRFR220NTRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR220NTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252 IRFR15N20DTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252