Infineon IPD Type N-Channel MOSFET, 24 A, 650 V N TO-252 IPD60R360PFD7SAUMA1

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 5 units)*

HK$21.50

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Pack*
5 - 5HK$4.30HK$21.50
10 - 95HK$4.08HK$20.40
100 - 245HK$3.84HK$19.20
250 - 495HK$3.56HK$17.80
500 +HK$3.46HK$17.30

*price indicative

Packaging Options:
RS Stock No.:
258-3858
Mfr. Part No.:
IPD60R360PFD7SAUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO-252 DPAK package features RDS(on) of 360mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon industry-leading SMD package reduce PCB space and in turn the bill-of-material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Related links