Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252
- RS Stock No.:
- 258-3839
- Mfr. Part No.:
- IPD35N12S3L24ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$14,112.50
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 7,500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$5.645 | HK$14,112.50 |
| 5000 - 5000 | HK$5.475 | HK$13,687.50 |
| 7500 + | HK$5.311 | HK$13,277.50 |
*price indicative
- RS Stock No.:
- 258-3839
- Mfr. Part No.:
- IPD35N12S3L24ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | IPD | |
| Package Type | PG-TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series IPD | ||
Package Type PG-TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
Related links
- Infineon IPD Type N-Channel MOSFET 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1
- Infineon IPD Type N-Channel MOSFET, 30 A N PG-TO-252
- Infineon IPD Type N-Channel MOSFET, 30 A N PG-TO-252 IPD30N06S2L23ATMA3
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD038N06NF2SATMA1
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252 IPD80P03P4L07ATMA2
- Infineon IPD Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252