Infineon iPB Type P-Channel MOSFET, 80 A, 40 V Enhancement TO-263

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 reel of 1000 units)*

HK$9,477.00

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 1000HK$9.477HK$9,477.00
2000 - 2000HK$9.288HK$9,288.00
3000 +HK$9.009HK$9,009.00

*price indicative

RS Stock No.:
258-3814
Mfr. Part No.:
IPB80P04P407ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Maximum Drain Source Resistance Rds

40.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

Green package (RoHS compliant)

100% Avalanche tested

Related links