Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$30.60
Add 18 units to get free delivery
In Stock
- Plus 2,400 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$15.30 | HK$30.60 |
| 10 - 98 | HK$14.55 | HK$29.10 |
| 100 - 248 | HK$13.65 | HK$27.30 |
| 250 - 498 | HK$12.70 | HK$25.40 |
| 500 + | HK$11.65 | HK$23.30 |
*price indicative
- RS Stock No.:
- 258-0712
- Mfr. Part No.:
- BSZ037N06LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
Related links
- Infineon BSZ Type N-Channel MOSFET 60 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 200 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 80 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 25 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 250 V N, 8-Pin TSDSON