Infineon BSP Type N-Channel MOSFET, 0.12 A, 40 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1

The image is for reference only, please refer to product details and specifications

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

HK$18.30

Add to Basket
Select or type quantity
In Stock
  • 3,930 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5HK$3.66HK$18.30
10 - 95HK$3.30HK$16.50
100 - 245HK$2.96HK$14.80
250 - 495HK$2.68HK$13.40
500 +HK$2.42HK$12.10

*price indicative

Packaging Options:
RS Stock No.:
250-0528
Mfr. Part No.:
BSP125H6433XTMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.12A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Small Signal n-channel products are suitable for automotive applications. This SIPMOS Power-Transistor is an N-Channel, Enhancement mode with Vds of 600 V, Rds(on) 45 Ω and Id is 0.12 A. It is dv/dt rated.

Pb-free lead plating

Maximum power dissipation is 360mW

Related links