Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247
- RS Stock No.:
- 244-2920
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 240 units)*
HK$23,284.80
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 - 240 | HK$97.02 | HK$23,284.80 |
| 480 - 480 | HK$96.792 | HK$23,230.08 |
| 720 + | HK$96.563 | HK$23,175.12 |
*price indicative
- RS Stock No.:
- 244-2920
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | IMW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series IMW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IMW120R030M1HXKSA1 MOSFET in comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Related links
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