Infineon IPT Type N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263

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Subtotal (1 reel of 2000 units)*

HK$51,072.00

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Units
Per unit
Per Reel*
2000 - 2000HK$25.536HK$51,072.00
4000 - 4000HK$25.025HK$50,050.00
6000 +HK$24.525HK$49,050.00

*price indicative

RS Stock No.:
244-0901
Mfr. Part No.:
IPT012N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon’s OptiMOS power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design.

N-channel, normal level

100% avalanche tested

Pb-free plating

RoHS compliant

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