N-Channel MOSFET, 130 A, 30 V, 8-Pin SuperSO8 5 x 6 Infineon BSC0501NSIATMA1

The Infineon OptiMOS™ 5 N-channel power MOSFET has 30 V drain source voltage (VDS) & 130 A drain current (ID). It offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. It has best-in-class on-state resistance and have broader use in desktop and server, high power density voltage regulator, etc.

Optimized for high performance buck converters
Monolithic integrated schottky like diode
Very low on-resistance RDS(on)@VGS = 4.5V
100% avalanche tested
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21

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