Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3

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Subtotal (1 pack of 10 units)*

HK$65.60

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Units
Per unit
Per Pack*
10 - 40HK$6.56HK$65.60
50 - 90HK$6.45HK$64.50
100 - 240HK$6.32HK$63.20
250 - 990HK$6.21HK$62.10
1000 +HK$6.10HK$61.00

*price indicative

Packaging Options:
RS Stock No.:
239-8671
Mfr. Part No.:
SQJ186EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

255W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

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