Renesas Electronics Type N-Channel MOSFET, 25 A, 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5

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Subtotal (1 pack of 5 units)*

HK$42.80

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Units
Per unit
Per Pack*
5 - 45HK$8.56HK$42.80
50 - 95HK$8.34HK$41.70
100 - 245HK$8.14HK$40.70
250 +HK$7.94HK$39.70

*price indicative

Packaging Options:
RS Stock No.:
234-7155
Mfr. Part No.:
RJK0651DPB-00#J5
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-669

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

14mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free

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