onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263 NTBGS004N10G
- RS Stock No.:
- 229-6446
- Mfr. Part No.:
- NTBGS004N10G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$98.90
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 10 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$49.45 | HK$98.90 |
| 10 - 98 | HK$48.00 | HK$96.00 |
| 100 - 248 | HK$46.50 | HK$93.00 |
| 250 - 498 | HK$45.50 | HK$91.00 |
| 500 + | HK$44.50 | HK$89.00 |
*price indicative
- RS Stock No.:
- 229-6446
- Mfr. Part No.:
- NTBGS004N10G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor power MOSFET has rugged technology for utmost reliability. It is specifically designed for wide SOA applications from a 48V bus.
Hot swap tolerant with superior SOA curve
ROHS compliant
Reduces conduction loss
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