Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3
- RS Stock No.:
- 228-2987
- Mfr. Part No.:
- SUM90100E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$67.90
FREE delivery for orders over HK$250.00
In Stock
- Plus 618 unit(s) shipping from 22 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | HK$33.95 | HK$67.90 |
| 10 - 48 | HK$32.95 | HK$65.90 |
| 50 - 98 | HK$31.90 | HK$63.80 |
| 100 - 248 | HK$31.00 | HK$62.00 |
| 250 + | HK$30.05 | HK$60.10 |
*price indicative
- RS Stock No.:
- 228-2987
- Mfr. Part No.:
- SUM90100E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 72.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 72.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 200-V (D-S) MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Vishay TrenchFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 SUP90100E-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 SUM70030M-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 SUM60061EL-GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 SUM40014M-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin TO-220