Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 pack of 5 units)*

HK$104.80

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Per unit
Per Pack*
5 - 45HK$20.96HK$104.80
50 - 95HK$20.36HK$101.80
100 - 245HK$19.72HK$98.60
250 - 995HK$19.10HK$95.50
1000 +HK$18.52HK$92.60

*price indicative

Packaging Options:
RS Stock No.:
228-2941
Mfr. Part No.:
SiZF906BDT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

83W

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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