Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- RS Stock No.:
- 228-2873
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
HK$99.00
FREE delivery for orders over HK$250.00
In Stock
- 2,594 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | HK$49.50 | HK$99.00 |
| 50 - 98 | HK$48.05 | HK$96.10 |
| 100 - 248 | HK$46.55 | HK$93.10 |
| 250 - 998 | HK$45.15 | HK$90.30 |
| 1000 + | HK$43.80 | HK$87.60 |
*price indicative
- RS Stock No.:
- 228-2873
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 184W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 184W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 32A Maximum Continuous Drain Current - SiHH080N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control tasks. It operates across a wide ambient range and is intended for applications requiring substantial current handling, efficient switching and compact PCB mounting. The device is manufactured to meet RoHS environmental standards and is supplied in a PowerPAK package for low-profile assembly.
Features and Benefits:
• 650V drain capability enables high-voltage applications
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies
What temperature extremes can the device tolerate in operation?
It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated junction temperatures.
How does the package assist with PCB assembly and thermal behaviour?
The PowerPAK surface‑mount package offers a low‑profile footprint for automated placement and provides a thermal path suited to copper heatsinking on the PCB.
What gate‑drive considerations are required for reliable switching?
Drive circuitry should respect the ±30V gate‑source rating and be sized to supply the typical 42nC gate charge for desired switching speed and EMI control.
Is this device appropriate for automotive systems?
It is not defined as an automotive‑standard device, so designers should verify qualification requirements before using it in certified automotive programmes.
Related links
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHM080N60E-T1-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel Power MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12