Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

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Subtotal (1 pack of 25 units)*

HK$76.30

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  • Shipping from 21 June 2027
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Units
Per unit
Per Pack*
25 - 25HK$3.052HK$76.30
50 - 75HK$3.00HK$75.00
100 - 225HK$2.94HK$73.50
250 - 975HK$2.888HK$72.20
1000 +HK$2.84HK$71.00

*price indicative

Packaging Options:
RS Stock No.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

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