ROHM Dual 2 Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- RS Stock No.:
- 223-6398
- Mfr. Part No.:
- UT6JC5TCR
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$130.20
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$5.208 | HK$130.20 |
| 50 - 75 | HK$5.08 | HK$127.00 |
| 100 - 225 | HK$4.952 | HK$123.80 |
| 250 - 975 | HK$4.828 | HK$120.70 |
| 1000 + | HK$4.708 | HK$117.70 |
*price indicative
- RS Stock No.:
- 223-6398
- Mfr. Part No.:
- UT6JC5TCR
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 2 mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Height | 0.65mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 2 mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Height 0.65mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM small signal MOSFET has DFN1010-3W package type. It is mainly used for switching circuits, high side loadswitch and relay driver.
Leadless ultra small and exposed drain pad for excellent thermal conduction SMD plastic package
Side wettable Flanks for automated optical solder inspection
AEC-Q101 qualified
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