Infineon CoolMOS Type N-Channel MOSFET, 111 A, 650 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 222-4718
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 30 units)*
HK$2,888.61
FREE delivery for orders over HK$250.00
In Stock
- 480 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | HK$96.287 | HK$2,888.61 |
| 90 - 120 | HK$93.693 | HK$2,810.79 |
| 150 + | HK$91.763 | HK$2,752.89 |
*price indicative
- RS Stock No.:
- 222-4718
- Mfr. Part No.:
- IPW60R018CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 111A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 251nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 416W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 111A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 251nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 416W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
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