Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF

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HK$178.64

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10 - 190HK$17.864HK$178.64
200 - 390HK$17.418HK$174.18
400 +HK$17.15HK$171.50

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Packaging Options:
RS Stock No.:
218-3118
Mfr. Part No.:
IRFS3307ZTRRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

9.65mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

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