Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
HK$146.00
FREE delivery for orders over HK$250.00
- 4,710 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | HK$14.60 | HK$146.00 |
| 630 - 1240 | HK$14.23 | HK$142.30 |
| 1250 + | HK$14.02 | HK$140.20 |
*price indicative
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS-T2 Series MOSFET, 100V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N10S4L06ATMA1
Features and Benefits:
• Continuous drain current 90A supports heavy current loads
• Low Rds(on) 6.6mΩ reduces conduction losses during operation
• Typical gate charge 75nC enables controlled switching transitions
• Maximum power dissipation 136W assists thermal management under load
• Maximum gate-source voltage 16V allows standard gate-drive voltages
Applications
• Ideal for DC-DC converters requiring high current handling
• Used with motor drive circuits demanding low conduction loss
• Can be used for battery management and distribution systems
• Suited to surface-mount assemblies on Compact power boards
What temperature range can it tolerate in operation?
What package and mounting type are provided for PCB assembly?
How many electrical connections does it present to a circuit?
What channel type and mode define its conduction behaviour?
What are its physical footprint dimensions?
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
